* High breakdown voltage VCEO 100/120V, High current 1A.
* Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] ( ) : 2SB631, 631K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25
B631K
Sanyo Semicon Device
155.39 KB
2sb631k.
www.DataSheet4U.com Ordering number:346G
PNP/NPN Epitaxial Planar Silicon Transistor
2SB631,631K/2SD600,600K
100V/120V, 1A Low-Frequency Power Ampli.
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B6010D - N-channel MOSFET
(BiTEK)
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B6010D
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