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B985 - PNP Epitaxial Planar Silicon Transistors

Key Features

  • Adoption of FBET, MBIT processes.
  • Low saturation voltage.
  • Large current capacity and wide ASO. Package Dimensions unit:mm 2006A [2SB985/2SD1347] ( ) : 2SB985 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics a.

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Ordering number:1244C PNP/NPN Epitaxial Planar Silicon Transistors 2SB985/2SD1347 Large-Current Driving Applications Applcations · Power supplies, relay drivers, lamp drivers, electrical equipment. Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO.