* High breakdown voltage : VCEO≥200V.
* Small reverse transfer capacitance and excellent high-frequnecy characteristics : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V.
* Adoption of FBET process Package Dimensions unit:mm 2009B [2SA1380/2SC3502] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8
C3502
Sanyo Semicon Device
39.05 KB
2sc3502.
Ordering number:ENN1425C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1380/2SC3502 Ultrahigh-Definition CRT Display, Video Output Applications Fe.
📁 Related Datasheet
C350 Phase Control SCR (Powerex Power Semiconductors)
C3500 Silicon Power Transistor (ETC)
C3503 2SC3503 (Sanyo Semicon Device)
C3504 2SC3504 (Sanyo Semicon Device)
C3505 2SC3505 (SavantIC)
C3506 Silicon NPN Transistor (Panasonic)
C3507 2SC3507 (Panasonic)
C3514 2SC3514 (Inchange Semiconductor)
C3515 2SC3515 (Toshiba)
C3518-Z SILICON POWER TRANSISTOR (Renesas)
