C3502 - 2SC3502

Sanyo Semicon Device

Datasheet Details

High breakdown voltage : VCEO≥200V.
Small reverse transfer capacitance and excellent high-frequnecy characteristics : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V.
Adoption of FBET process Package Dimensions unit:mm 2009B [2SA1380/2SC3502] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1380 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Coll.

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Published: Jan 12, 2008 |