* Adoption of MBIT processes.
* Large current capacitance.
* Low collector-to-emitter saturation voltage.
* High-speed switching.
* High allowable power dissipation. Package Dimensions unit:mm 2041A [2SA2022/2SC5610] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 Specifications ( )
C5610
Sanyo Semicon Device
49.47 KB
2sc5610.
Ordering number:ENN6367 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2022/2SC5610 DC/DC Converter Applications Applications Relay drivers, .
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