* Composite type with an P-Channel Sillicon MOSFET (MCH3312) and a Schottky Barrier Diode (SBS001) contained in one package facilitating high-density mounting.
* [MOSFET]
* Low ON-resistance.
* Ultrahigh-speed switching.
* 4V drive.
* [SBD]
* S
CPH5810
Sanyo Semicon Device
44.92 KB
P-channel silicon mosfet.
Ordering number : ENN8206
CPH5810
CPH5810
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
General-Purpose Switching Device Applicati.
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