Part number:
D879
Manufacturer:
Sanyo Semicon Device
File Size:
104.28 KB
Description:
2sd879.
* In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.
* The charge time is approximately 1 second faster than that of germanium transistors.
* Less power dissipation because of low Collector-toEmitter Voltage VCE(sat), permitting more flashes of light
D879
Sanyo Semicon Device
104.28 KB
2sd879.
📁 Related Datasheet
D870 - 2SD870
(Mospec Semiconductor)
A
..
A
..
A
..
.
D8740150GT - GaAs Power Doubler
(PDI)
..
Product Specification
D8740150GT
GaAs Power Doubler, 40 – 870MHz, 15.5dB min. Gain @ 870MHz, 375mA max. @ 24VDC
FEATURES
• • • .
D8740150GTH - GaAs Power Doubler
(PDI)
..
Product Specification
D8740150GTH
GaAs Power Doubler, 40 – 870MHz, 15.5dB min. Gain @ 870MHz, High, 440mA max. @ 24VDC
FEATURES.
D8740180GT - GaAs Power Doubler
(PDI)
..
Product Specification
D8740180GT
GaAs Power Doubler, 40 – 870MHz, 18.5dB min. Gain @ 870MHz, 375mA max. @ 24VDC
FEATURES
• • • .
D8740180GTH - GaAs Power Doubler
(PDI)
..
Product Specification
D8740180GTH
GaAs Power Doubler, 40 – 870MHz, 18.5dB min. Gain @ 870MHz, High, 440mA max. @ 24VDC
FEATURES.
D8740200GT - GaAs Power Doubler
(PDI)
..
Product Specification
D8740200GT
GaAs Power Doubler, 40 – 870MHz, 20.5dB min. Gain @ 870MHz, 375mA max. @ 24VDC
FEATURES
• • • .
D8740200GTH - GaAs Power Doubler
(PDI)
..
Product Specification
D8740200GTH
GaAs Power Doubler, 40 – 870MHz, 20.5dB min. Gain @ 870MHz, 440mA max. @ 24VDC
FEATURES
• • •.
D8740220GT - GaAs Power Doubler
(PDI)
..
Product Specification
D8740220GT
GaAs Power Doubler, 40 – 870MHz, 22.0dB min. Gain @ 870MHz, 375mA max. @ 24VDC
FEATURES
• • • .
