* 6A, -200V, rDS(ON) = 0.650Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Ra
FT-55U
Sanyo Semicon Device
70.29 KB
256k (32768 words 8 bits) sram control pins: oe and ce.
FSYE923A0D, FSYE923A0R
TM
Data Sheet
June 2000
File Number
4773.1
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
The Discrete Product.
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(Fagor)
FT01 N
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