C4204 - 2SC4204

Sanyo Semiconductor Corporation

Datasheet Details

Adoption of MBIT process.
High DC current gain (hFE=800 to 3200).
Large current capacity (IC=0.7A).
Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
High VEBO (VEBO≥15V). 0.45 0.5 0.6 2.0 0.45 0.44 14.0 5.0 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Te.

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