* Adoption of FBET, MBIT processes.
* Large current capacity and wide ASO.
* Low collector-to-emitter saturation voltage.
* Fast switching speed.
* Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller. Package Dimensions unit:mm 2045B [2SB1201/2SD1801]
D1801
Sanyo Semiconductor Corporation
141.42 KB
2sd1801.
Ordering number:EN2112B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1201/2SD1801 High-Current Switching Applications Applications Voltage .
📁 Related Datasheet
D1800N Rectifier Diode (Infineon)
D1802 2SD1802 (Sanyo Semiconductor Corporation)
D1803 PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
D1804 2SD1804 (Sanyo Semicon Device)
D1805 2SD1805 (Sanyo Semicon Device)
D1806 2SD1806 (Sanyo Semicon Device)
D180SC4M Schottky Barrier Diodes (Shindengen)
D180SC6M Schottky Barrier Diodes (Shindengen)
D1812 NPN Transistor (Rohm)
D1815 2SD1815 (Sanyo)
