C3790
Features
- High breakdown voltage (VCEO≥300V).
- Small reverse transfer capacitance and excellent high frequency characteristic
: Cre=1.8p F (NPN), 2.3p F (PNP).
- Adoption of MBIT process.
Package Dimensions unit:mm
2042B
[2SA1480/2SC3790]
8.0 4.0
1.0 1.0
1.5 1.4
3.0 7.5 15.5 11.0
1.6 0.8
0.8 0.75 0.7
( ) : 2SA1480
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current
Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(- )200V, IE=0
Emitter Cutoff Current
IEBO VEB=(- )4V, IC=0
DC Current Gain h FE VCE=(- )10V, IC=(- )10m A
Gain-Bandwidth Product f T VCE=(- )30V, IC=(- )10m A
- : The 2SA1480/2SC3790 are classified by 10m A h FE as follows...
