* High speed (tf=100ns typ).
* High reliability (Adoption of HVP process).
* High breakdown voltage (VCBO=1500V).
* Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC3896] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collec
C3896
Sanyo
94.72 KB
Npn triple diffused planar silicon transistor.
Ordering number:EN4097
NPN Triple Diffused Planar Silicon Transistor
2SC3896
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicatio.
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