C3896 - NPN Triple Diffused Planar Silicon Transistor

Sanyo

Datasheet Details

Part number	C3896
Manufacturer	Sanyo
File Size	94.72 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	C3896-Sanyo.pdf

High speed (tf=100ns typ).
High reliability (Adoption of HVP process).
High breakdown voltage (VCBO=1500V).
Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC3896] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc.

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Published: Jun 8, 2015 |