C4104 - 2SC4104

Sanyo

Datasheet Details

High fT.
Small reverse transfer capacitance.
Adoption of FBET process. Package Dimensions unit:mm 2018A [2SA1580/2SC4104] ( ) : 2SA1580 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions.

📁 C4104 Similar Datasheet

C4106 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
C4108 - 2SC4108 (Sanyo Semiconductor)
C4109 - 2SC4109 (Sanyo Semiconductor)
C4111 - Power Transistors (Panasonic Semiconductor)
C4112 - Transistor (ETC)
C4115 - 2SC4115 (Jiangsu)
C4115E - 2SC4115E (Jiangsu Changjiang Electronics)
C4115S - 2SC4115S (Jiangsu Changjiang Electronics)

Other Datasheets by Sanyo

Published: Jun 9, 2015 |