* ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: RDS(on)1=31mΩ(typ.)
* 4V drive
* N-channel MOSFET + P-channel MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Cu
FW906
Sanyo
260.36 KB
N-channel and p-channel silicon mosfets.
Ordering number : ENA1809
FW906
SANYO Semiconductors
DATA SHEET
FW906
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device App.
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FW005G FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS (EIC discrete Semiconductors)
FW01G FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS (EIC discrete Semiconductors)
FW02G FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS (EIC discrete Semiconductors)
FW04G FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS (EIC discrete Semiconductors)
FW06G FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS (EIC discrete Semiconductors)
FW08G FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS (EIC discrete Semiconductors)
