K1052
Features
- Low ON-state resistance.
- Ultrahigh-speed switching.
N-Channel Silicon MOSFET
2SK1052
Ultrahigh-Speed Switching Applications
Package Dimensions unit:mm
2052C
[2SK1052]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
18.0 5.6
0.8 123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
Channel Temperature Storage Temperature
Tch Tstg
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1m A, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=450V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±30V,...
