Diffused Junction Silicon Diode
Ultrahigh-Speed Switching Diode
VF=1.3V max. (IF=20A) VRRM=300V trr=20ns (typ. )
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Repetitive Peak Reverse Voltage Non-repeated Peak Reverse Surge Voltage Average Output Current R. M. S Forward Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM DC bias PW≤100μs, duty ≤ 0.1 50Hz resistive load, Sine wave Tc=38°C Tc=25°C (SANYO’s ideal heat d.