* Ultrasmall package facilities miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm)
* Small IGSS : max
* 500pA (VGSS=
* 20V, VDS=0V)
* Small Ciss : typ. 0.7pF (VDS= 10V, VGS=0V, f=1MHz)
* Halogen free compliance Specifications Absolute Maxim
TF410
Sanyo
169.88 KB
N-channel silicon junction fet.
Ordering number : ENA2007
TF410
SANYO Semiconductors
DATA SHEET
TF410
N-Channel Silicon Junction FET
Impedance Converter, Infrared Sensor Applicat.
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