D669A Datasheet Silicon NPN Power Transistors

Manufacturer: SavantIC

Download the D669A datasheet PDF. This datasheet also includes the D669 variant, as both parts are published together in a single manufacturer document.

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D669A silicon npn power transistors by SavantIC - Datasheet Preview — Note: The manufacturer provides a single datasheet file (D669-SavantIC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	D669A
Manufacturer	SavantIC
File Size	272.21 KB
Description	Silicon NPN Power Transistors
Datasheet	D669A Datasheet

General Description

·With TO-126 package ·Complement to type 2SB649/649A ·High breakdown voltage VCEO:120/160V ·High current 1.5A ·Low saturation voltage,excellent hFE linearity APPLICATIONS ·For low-frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage 2SD669 2SD669A Open emitter VCEO Collector-emitter voltage 2SD669 2SD669A Open base VEBO Emitter-base voltage Open collector IC Collector current (DC) ICM Collector current-peak PD Total power dissipation Tj Junction temperature Ta=25 TC=25 Tstg Storage temperature VALUE 180 180 120 160 5 1.5 3 1 20 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage 2SD669 2SD669A IC=10mA;

RBE=B V(BR)CBO Collector-base breakdown voltage 2SD669 2SD669A IC=1m A ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=0.5A ;IB=50mA VBE Base-emitter on voltage IC=150mA ;

VCE=5V ICBO Collector cut-off current VCB=160V;

Overview

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD669.

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D669	Silicon NPN Power Transistors