D669A
DESCRIPTION
- With TO-126 package
- plement to type 2SB649/649A
- High breakdown voltage VCEO:120/160V
- High current 1.5A
- Low saturation voltage,excellent h FE linearity
APPLICATIONS
- For low-frequency power amplifier applications
PINNING PIN 1 2 3
DESCRIPTION
Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SD669 2SD669A
Open emitter
VCEO
Collector-emitter voltage
2SD669 2SD669A
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current (DC)
ICM Collector current-peak
PD Total power dissipation Tj Junction temperature
Ta=25 TC=25
Tstg Storage temperature
VALUE 180 180 120 160 5 1.5 3 1 20 150
-55~150
UNIT V
V V A A W
Savant IC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL...
