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TIP125 - Silicon PNP Darlington Power Transistors

Datasheet Details

Part number TIP125
Manufacturer SavantIC
File Size 128.47 KB
Description Silicon PNP Darlington Power Transistors
Datasheet download datasheet TIP125 Datasheet

General Description

·With TO-220C package ·DARLNGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP120/121/122 APPLICATIONS ·Designed for general–purpose amplifier and low–speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS TIP125 VCBO Collector-base voltage TIP126 TIP127 Open emitter TIP125 VCEO Collector-emitter voltage TIP126 TIP127 Open base VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current-DC Collector power dissipation Junction temperature Storage temperature Open collector TC=25 Ta=25 VALUE -60 -80 -100 -60 -80 -100 -5 -5 -8 -120 65 2 150 -65~150 UNIT V V V A A mA W SavantIC Semiconductor Silicon PNP Darlington Power Transistors Product Specification TIP125/126/127 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage TIP125 TIP126 IC=-0.1A, IB=0 TIP127 VCE(sat)-1 Collector-emitter saturation voltage IC=-3A ,IB=-12mA VCE(sat)-2 Collector-emitter saturation voltage IC=-5A ,IB=-20mA VBE Base-emitter on voltage IC=-3.0A ;

VCE=-3V ICBO Collector cut-off current TIP125 TIP126 TIP127 VCB=-60V, IE=0 VCB=-80V, IE=0 VCB=-100V, IE=0 ICEO Collector cut-off current TIP125 TIP126 TIP127 VCE=-30V, IB=0 VCE=-40V, IB=0 VCE=-50V, IB=0 IEBO hFE-1 hFE-2 COB Emitter cut-off current DC current gain DC current gain Output capacitance VEB=-5V;

IC=0 IC=-0.5A ;

Overview

SavantIC Semiconductor Silicon PNP Darlington Power Transistors Product.