* Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic F G H J MARKING 0410S REF. A B C D E F = Date code Millimeter Min. Max. 6.20 6.70 6.70 7.30 3.30 3.70 1.42 1.90 4.50 4.70 0.60 0.82 REF. G H J K L M Millimeter Min. Max. 0.10 0.25 0.35 2.30 R
SSM0410S Datasheet (399.59 KB)
SSM0410S
SeCoS Halbleitertechnologie
399.59 KB
N-channel mosfet.
SSM0410S
Elektronische Bauelemente 3A , 100V , RDS(ON) 310 m N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifi.
📁 Related Datasheet
SSM0410-C - N-Channel MOSFET
(SeCoS)
Elektronische Bauelemente
SSM0410-C
3.5A, 100V, RDS(ON) 148mΩ N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A Suffix of “-C” specif.
SSM04N70BGF-A - N-channel Enhancement-mode Power MOSFET
(Silicon Standard)
SSM04N70BGF-A N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
650V
R DS(ON)
2.4Ω
I D 4A
Pb-free; RoHS-pliant TO-220FM
G D S
T.
SSM04N70BGF-H - N-channel Enhancement-mode Power MOSFET
(Silicon Standard)
SSM04N70BGF-H N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
700V
R DS(ON)
2.4Ω
I D 4A
Pb-free; RoHS-pliant TO-220FM
G D S
T.
SSM04N70BGP-A - N-channel Enhancement-mode Power MOSFET
(Silicon Standard)
SSM04N70BGP-A N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
650V
R DS(ON)
2.4Ω
I D 4A
Pb-free; RoHS-pliant TO-220
G D S
TO-.
SSM04N70BP - N-Channel Enhancement Mode Power MOSFET
(Silicon Standard)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
t a .D
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
.
SSM04N70BR - N-Channel Enhancement Mode Power MOSFET
(Silicon Standard)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
t a .D
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
.
SSM01N60J - (SSM01N60H) N Channel Enhancement-Mode Power MOSFET
(Silicon Standard)
.
SSM01N60P - N Channel Enhancement Mode Power MOSFET
(Silicon Standard)
.
