Ideal for medium power amplification and switching
MARKING
2L
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector to Emitter Voltage Collector to Base Voltage Emitter to Base
MMBT5401, GME
Production specification
PNP General Purpose Transistor
FEATURES
Epitaxial planar die construction. Complementary NPN type available
(MMBT5551)..
MMBT5401, Diodes Incorporated
MMBT5401
150V PNP HIGH-VOLTAGE TRANSISTOR IN SOT23
Features
Epitaxial Planar Die Construction Complementary NPN Type - MMBT5551 Ideal for Low P.
MMBT5401, UTC
UNISONIC TECHNOLOGIES CO., LTD
MMBT5401
PNP SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING TRANSISTOR
FEATURES
*Collector-Emitter Voltage: VCEO=-150V.
MMBT5401, LITE-ON
PNP General Purpose Transistor
MMBT5401
FEATURES
• Ideal for Medium Power Amplification and
Switching
• Complementary PNP Type available(MMBT5551)
M.
