* High density cell design for ultra low RDS(ON)
* Fully Characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special processing technology for high ESD capability APPLICATIONS
* High side sw
SCP35N03J-C Datasheet (277.26 KB)
SCP35N03J-C
SeCoS
277.26 KB
N-channel enhancement mode power mosfet.
Elektronische Bauelemente
SCP35N03J-C
35A, 30V, RDS(ON) 7mļ N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of ā-Cā specifie.
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