* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING 50N10 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch A B C D 1 Gate GE 2 Drain 3 Source K HF N O P M
SSD50N10
SeCoS
1.33 MB
N-ch enhancement mode power mosfet.
Elektronische Bauelemente
SSD50N10
50A , 100V , RDS(ON) 22mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies ha.
📁 Related Datasheet
SSD50N10-C - N-Ch Enhancement Mode Power MOSFET
(SeCoS)
Elektronische Bauelemente
SSD50N10-C
50A, 100V, RDS(ON) 22mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies ha.
SSD50N03 - N-Channel MOSFET
(SeCoS)
Elektronische Bauelemente
SSD50N03
51A , 30V , RDS(ON) 9mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halo.
SSD50N06-15D - N-Channel MOSFET
(SeCoS)
Elektronische Bauelemente
SSD50N06-15D
N-Ch Enhancement Mode Power MOSFET 51A, 60V, RDS(ON) 13 mΩ
RoHS Compliant Product A suffix of “-C” specifies .
SSD50N08-14D - N-Channel MOSFET
(SeCoS)
Elektronische Bauelemente
SSD50N08-14D
55A, 80V, RDS(ON) 11mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies h.
SSD5000 - N-Channel Enhancement Mode Quad D-Mos FET Analog Switch Arrays
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SSD5001 - N-Channel Enhancement Mode Quad D-Mos FET Analog Switch Arrays
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SSD5002 - N-Channel Enhancement Mode Quad D-Mos FET Analog Switch Arrays
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SSD5030N - N-Channel MOSFET
(South Sea Semiconductor)
SSD5030N
N-Channel Enhancement Mode MOSFET
Product Summary
VDS (V)
30V
TO-252
D
ID (A)
50A
RDS(ON) (mΩ) Max 9.5 @VGS = 10V 19.5 @VGS = 4.5V
G S
D
.
