SSD50N10 Datasheet - SeCoS

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SSD50N10 N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente SSD50N10 50A , 100V , RDS(ON) 22mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies ha.
The SSD50N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most.

SSD50N10-SeCoS.pdf

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Datasheet Details

Part number:

SSD50N10

Manufacturer:

SeCoS

File Size:

1.33 MB

Description:

N-Ch Enhancement Mode Power MOSFET

Features

* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING 50N10 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch A B C D 1 Gate GE 2 Drain 3 Source K HF N O P M

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SSD50N10 N-Ch Enhancement Mode Power MOSFET SeCoS

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