SSG10N10 Datasheet, Mosfet, SeCoS

SSG10N10 Features

• Mosfet Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING 10N10SC Date Code PACKAGE INFOR

PDF File Details

Part number:

SSG10N10

Manufacturer:

SeCoS

File Size:

1.08MB

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The SSG10N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate

SSG10N10 Application

• Applications . FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Gree

TAGS

SSG10N10

SeCoS

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