SSG10N10 N-Channel Enhancement Mode Power MosFET

SeCoS

Description

Elektronische Bauelemente SSG10N10 10A , 100V , RDS(ON) 21mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies ha.
The SSG10N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most.

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Datasheet Specifications

Part number: SSG10N10
Manufacturer: SeCoS
File Size: 1.08 MB
Datasheet: SSG10N10-SeCoS.pdf
Description: N-Channel Enhancement Mode Power MosFET

Features

* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING 10N10SC Date Code PACKAGE INFORMATION Package MPQ SOP-8 3K Leader Size 13 inch SOP-8 B LD M A H G C N JK FE REF. A B C D E F G Millim

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SSG10N10 N-Channel Enhancement Mode Power MosFET SeCoS

SeCoS SSG10N10-like datasheet