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SSG10N10 - N-Channel Enhancement Mode Power MosFET

SSG10N10 Description

Elektronische Bauelemente SSG10N10 10A , 100V , RDS(ON) 21mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies ha.
The SSG10N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most.

SSG10N10 Features

* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING 10N10SC Date Code PACKAGE INFORMATION Package MPQ SOP-8 3K Leader Size 13 inch SOP-8 B LD M A H G C N JK FE REF. A B C D E F G Millim

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Datasheet Details

Part number
SSG10N10
Manufacturer
SeCoS
File Size
1.08 MB
Datasheet
SSG10N10-SeCoS.pdf
Description
N-Channel Enhancement Mode Power MosFET

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N-Channel Enhancement Mode Power MosFET SeCoS
SeCoS SSG10N10-like datasheet