SSG3215B-C Dual-N Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SSG3215B-C 1.7A, 150V, RDS(O ) 330mΩ Dual- Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies.
The SSG3215B-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for.

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Datasheet Specifications

Part number: SSG3215B-C
Manufacturer: SeCoS
File Size: 723.56 KB
Datasheet: SSG3215B-C-SeCoS.pdf
Description: Dual-N Enhancement Mode Power MOSFET

Features

* Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 3215B = Date Code PACKAGE INFORMATION Package MPQ SOP-8 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSG3215B-C Lead (Pb)-free and Halogen-free SOP-8 B LD M A H G C N JK

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SSG3215B-C Dual-N Enhancement Mode Power MOSFET SeCoS

SeCoS SSG3215B-C-like datasheet