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SSG3215B-C Datasheet - SeCoS

Dual-N Enhancement Mode Power MOSFET

SSG3215B-C Features

* Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 3215B = Date Code PACKAGE INFORMATION Package MPQ SOP-8 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSG3215B-C Lead (Pb)-free and Halogen-free SOP-8 B LD M A H G C N JK

SSG3215B-C General Description

The SSG3215B-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSG3215B-C meet the RoHS and Green Product requirement with full function reliability approv.

SSG3215B-C Datasheet (723.56 KB)

Preview of SSG3215B-C PDF

Datasheet Details

Part number:

SSG3215B-C

Manufacturer:

SeCoS

File Size:

723.56 KB

Description:

Dual-n enhancement mode power mosfet.
Elektronische Bauelemente SSG3215B-C 1.7A, 150V, RDS(O ) 330mΩ Dual- Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies.

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SSG3215B-C Dual-N Enhancement Mode Power MOSFET SeCoS

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