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SSG8N10 N-Channel Enhancement Mode Power MosFET

SSG8N10 Description

Elektronische Bauelemente SSG8N10 8A , 100V , RDS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halo.
The SSG8N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most o.

SSG8N10 Features

* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING 8N10SC Date Code PACKAGE INFORMATION Package MPQ SOP-8 3K Leader Size 13 inch SOP-8 B LD M A H G C N JK FE REF. A B C D E F G Millimet

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Datasheet Details

Part number
SSG8N10
Manufacturer
SeCoS
File Size
454.99 KB
Datasheet
SSG8N10-SeCoS.pdf
Description
N-Channel Enhancement Mode Power MosFET

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N-Channel Enhancement Mode Power MosFET SeCoS
SeCoS SSG8N10-like datasheet