SSG8N10 N-Channel Enhancement Mode Power MosFET

SeCoS

Description

Elektronische Bauelemente SSG8N10 8A , 100V , RDS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halo.
The SSG8N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most o.

📥 Download Datasheet

SSG8N10 Datasheet Preview — Preview of SSG8N10 PDF

Datasheet Specifications

Part number: SSG8N10
Manufacturer: SeCoS
File Size: 454.99 KB
Datasheet: SSG8N10-SeCoS.pdf
Description: N-Channel Enhancement Mode Power MosFET

Features

* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING 8N10SC Date Code PACKAGE INFORMATION Package MPQ SOP-8 3K Leader Size 13 inch SOP-8 B LD M A H G C N JK FE REF. A B C D E F G Millimet

SSG8N10 Distributors

📁 Related Datasheet

SSG200EF60E SSG25C100 SSG25C120 SSG25C20 SSG25C30 SSG25C40

📌 All Tags

SSG8N10 N-Channel Enhancement Mode Power MosFET SeCoS

SeCoS SSG8N10-like datasheet