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SSPR10N06-C N-Channel Enhancement Mode Power MOSFET

SSPR10N06-C Description

Elektronische Bauelemente SSPR10N06-C 10A, 60V, RDS(ON) 45mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifi.
The SSPR10N06-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for mos.

SSPR10N06-C Features

* Advanced High Cell Density Trench Technology
* Super Low Gate Charge
* Green Device Available MARKING SPR-8PP 10N06   = Date code PACKAGE INFORMATION Package MPQ Leader Size SPR-8PP 3K 13 inch S ORDER INFORMATION S Part Number Type S SSPR10N06-C Lead (Pb)-free and

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Datasheet Details

Part number
SSPR10N06-C
Manufacturer
SeCoS
File Size
260.35 KB
Datasheet
SSPR10N06-C-SeCoS.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET SeCoS
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