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SSPR10N06-C

N-Channel Enhancement Mode Power MOSFET

SSPR10N06-C Features

* Advanced High Cell Density Trench Technology

* Super Low Gate Charge

* Green Device Available MARKING SPR-8PP 10N06   = Date code PACKAGE INFORMATION Package MPQ Leader Size SPR-8PP 3K 13 inch S ORDER INFORMATION S Part Number Type S SSPR10N06-C Lead (Pb)-free and

SSPR10N06-C General Description

The SSPR10N06-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSPR10N06-C meet the RoHS and Green Product requirement with full function reliability approved..

SSPR10N06-C Datasheet (260.35 KB)

Preview of SSPR10N06-C PDF

Datasheet Details

Part number:

SSPR10N06-C

Manufacturer:

SeCoS

File Size:

260.35 KB

Description:

N-channel enhancement mode power mosfet.
Elektronische Bauelemente SSPR10N06-C 10A, 60V, RDS(ON) 45mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifi.

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TAGS

SSPR10N06-C N-Channel Enhancement Mode Power MOSFET SeCoS

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