SSY5829P P-Channel MOSFET

SeCoS

Description

Elektronische Bauelemente SSY5829P -2.5 A, -20 V, RDS(ON) 0.110  P-Channel Enhancement MOSFET With Schottky Diode RoHS Compliant Product A suffix o.
The miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissip.

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Datasheet Specifications

Part number: SSY5829P
Manufacturer: SeCoS
File Size: 652.97 KB
Datasheet: SSY5829P-SeCoS.pdf
Description: P-Channel MOSFET

Features

* Low RDS(on) provides higher efficiency and extends battery life.
* Low thermal impedance copper leadframe 1206-8CF saves board space.
* Fast switching speed.
* High performance trench technology. PACKAGE INFORMATION Package MPQ 1206-8CF 3K LeaderSize 7’ inch REF. A B C D E F

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SSY5829P P-Channel MOSFET SeCoS

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