2N929
Seme LAB
10.36 KB
Bipolar npn device.
2N929
Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package..
📁 Related Datasheet
2N929 - NPN silicon annular transistors
(Motorola)
2N929, A (SILICON) 2N930, A
2N929JAN AVAILABLE
2N930JAN AVAILABLE
NPN silicon annular transistors for low-level, lownoise amplifier applications.
CAS.
2N929A - NPN silicon annular transistors
(Motorola)
2N929, A (SILICON) 2N930, A
2N929JAN AVAILABLE
2N930JAN AVAILABLE
NPN silicon annular transistors for low-level, lownoise amplifier applications.
CAS.
2N90 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N90
·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-.
2N90 - N-CHANNEL POWER MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 2N90
2.0A, 900V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advance.
2N90-FC - N-CHANNEL MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2N90-FC
Power MOSFET
2A, 900V N-CHANNEL POWER MOSFET
11
DESCRIPTION
The UTC 2N90-FC provide excellent RDS(ON), l.
2N909 - SI NPN LO-PWR BJT
(New Jersey Semi-Conductor)
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2N910 - NPN silicon annular transistors
(Motorola)
2N910 (SILICON) 2N911
NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications.
CASE 22
(TO-18)
.
2N911 - NPN silicon annular transistors
(Motorola)
2N910 (SILICON) 2N911
NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications.
CASE 22
(TO-18)
.
