BUZ50A-220M MOS POWER N-CHANNEL ENHANCEMENT MODE TRANSISTORS

Seme LAB

Description

BUZ50A *220M BUZ50B *220M MECHANICAL DATA Dimensions in mm 10.6 (0.42) 0.8 4.6 (0.18) (0.03) 3.70 Dia.Nom 16.5 (0.65) 1.5(0.53) 10.

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Datasheet Specifications

Part number: BUZ50A-220M
Manufacturer: Seme LAB
File Size: 15.27 KB
Datasheet: BUZ50A-220M-SemeLAB.pdf
Description: MOS POWER N-CHANNEL ENHANCEMENT MODE TRANSISTORS

Features

* HERMETIC TO220 ISOLATED METAL PACKAGE
* CECC SCREENING OPTIONS
* JAN LEVEL SCREENING OPTIONS 12.70 (0.50 min) 2.54 (0.1) BSC 1.0 (0.039) 2.70 (0.106) TO220M (TO-257AB)- Isolated Metal Package Pin 1
* Gate Pin 2
* Drain Pin 3

Applications

* Hermetically sealed version for high reliability power linear and switching applications ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS Drain
* Source Voltage VGS Gate
* Source Voltage ID Continious Drain Current IDM Maximum Pulsed Drain Current PD To

BUZ50A-220M Distributors

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BUZ50A-220M MOS POWER N-CHANNEL ENHANCEMENT MODE TRANSISTORS Seme LAB

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