D1011UK Datasheet (Seme LAB) - METAL GATE RF SILICON FET

D1011UK, METAL GATE RF SILICON FET

TetraFET D1011UK MECHANICAL DATA A 8 D 7 6 5 1 2 CB 3 4 H METAL GATE RF SILICON FET N GOLD METALLISED MULTI-PURPOSE SILICON P DMOS RF FET 10W 28V 500MHz SINGLE ENDED K L J M E F G SO8 PACKAGE PIN 1 SOURCE PIN 5 SOURCE PIN 2 DRAIN PIN 6 GATE PIN 3 DRAIN PIN 7 GATE PIN 4 SOURCE PIN 8 SOURCE Dim.

mm A 4.06 B 5.08 C 1.27 D 0.51 E 3.56 F 4.06 G 1.65 H 0.7

D1011UK Features

* SIMPLIFIED AMPLIFIER DESIGN

* SUITABLE FOR BROAD BAND APPLICATIONS

* VERY LOW Crss

* SIMPLE BIAS CIRCUITS

* LOW NOISE

* HIGH GAIN

* 13 dB MINIMUM APPLICATIONS

* HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1GHz ABSOLUTE MAXIMUM RATINGS (T