* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS
* VERY LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
* 13 dB MINIMUM APPLICATIONS
* HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1GHz ABSOLUTE MAXIMUM RATINGS (T
D1011UK
Seme LAB
132.58 KB
Metal gate rf silicon fet.
TetraFET
D1011UK
MECHANICAL DATA
A
8
D
7
6
5
1
2 CB
3
4
H
METAL GATE RF SILICON FET
N
GOLD METALLISED
MULTI-PURPOSE SILICON
P
DMOS RF FE.
📁 Related Datasheet
D1011 - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D1011UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A N
8
D
1 2
C B P
7 6 5
3 4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 2.
D1010ADT - Trench MOS Barrier Schottky Rectifier
(NIKO-SEM)
NIKO-SEM
Trench MOS Barrier Schottky Rectifier
D1010ADT
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
IF(AV)
10A
VRRM
100V
IFSM
120A
VF(typ.
D1010UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D1010UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
C (2 pls)
1 HD
B
2
3
5
4
E (4 pls)
F I
G (typ)
P (2 pls) A
PIN 1 .
D1012UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D1012UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
B (4 pls)
C
G
(t yp )
2
3
1
E
AD
5
4
I F
GOLD METALLISED MULT.
D1013UK - METAL GATE RF SILICON FET
(Seme LAB)
MECHANICAL DATA
C
2 1 A
3
F (2 pls)
H J
N (typ)
B
D (2 pls)
MI
PIN 1 PIN 3
SOURCE GATE
E
KG
DP
PIN 2 DRAIN
DIM mm
A 16.51
B
6.35
C
45°
.
D1014UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D1014UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
C
2 1 A
3
F (2 pls)
H J
N (typ)
B
D (2 pls)
MI
PIN 1 PIN 3
SOURCE GATE.
D1015 - 2SD1015
(Sony)
.
D1015UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D1015UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
B (4 pls)
C
G
(t yp )
2
3
1
E
AD
5
4
I F
GOLD METALLISED MULT.
