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TetraFET
D2031UK
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm.
5.50 ± 0.15 1.27 ± 0.05 2 PL. 2 PL. 0.47 1.65 2 PL. 0.3 R. 4 PL.
2.313 ± 0.2
4 3
3.00 2.07 0.381 2 PL. 2 PL.
5
1.27
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 28V – 1GHz SINGLE ENDED
0.360 ± 0.005
6
1.27 6.50 ± 0.15
2 1
0.47 2 PL. 0.80 4 PL. 4.90 ± 0.15
7
1.27
8
0.10 R. TYP.
FEATURES
0.10 TYP. 0.508
0.10 TYP.
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS
F-0127 PACKAGE
PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE
• VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM
Ceramic Material: Alumina. Parts can also be supplied with AlN or BeO for improved thermal resistance.