2N5583
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Bipolar pnp device.
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2N5581 - NPN Silicon Small Signal Transistor
(Motorola)
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2N5581 - NPN SILICON SWITCHING TRANSISTOR
(Microsemi Corporation)
TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/423 Devices 2N5581 2N5582 Qualified Level JAN JANTX JANTXV
MAXIMUM RATING.
2N5581 - Silicon NPN Transistor
(Semicoa Semiconductor)
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Data Sheet
Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN lev.
2N5582 - NPN Silicon Small Signal Transistor
(Motorola)
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2N5582 - SILICON NPN TRANSISTOR
(Central Semiconductor)
2N5582
SILICON NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5582 is a silicon NPN transistor designed.
2N5582 - NPN SILICON SWITCHING TRANSISTOR
(Microsemi Corporation)
TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/423 Devices 2N5581 2N5582 Qualified Level JAN JANTX JANTXV
MAXIMUM RATING.
2N5583 - HIGH FREQUENCY TRANSISTOR
(Motorola)
2N5583
JAN, JTX, JTXV AVAILABLE CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
PNP SILICON
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MAXIMUM RATINGS
Rating
Collector-Emitt.
2N5583 - PNP Silicon High Frequency Transistor
(Advanced Semiconductor)
2N5583
PNP SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The 2N5583 is Designed for High Frequency Amplifier, and Non Saturated Switching Applicatio.
2N5583 - Silicon Epitaxial Planar Bipolar MW NPN Transistor
(GAE)
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2N5584 - NPN Transistor
(SSDI)
30 AMP NPN(continued)
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
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