HCU65R360S - 650V N-Channel Super Junction MOSFET

SemiHow

Datasheet Details

Part number	HCU65R360S
Manufacturer	SemiHow
File Size	265.95 KB
Description	650V N-Channel Super Junction MOSFET
Datasheet	HCU65R360S-SemiHow.pdf

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 23 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested BVDSS = 650 V RDS(on) typ ȍ ID = 11 A D-PAK I-PAK 2 1 1 32 3 HCD65R360S HCU65R360S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter.

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Published: Apr 8, 2016 |