Part number:
HFD2N90
Manufacturer:
SemiHow
File Size:
249.33 KB
Description:
N-channel mosfet.
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Teste
HFD2N90
SemiHow
249.33 KB
N-channel mosfet.
📁 Related Datasheet
HFD2N60 - N-Channel MOSFET
(SemiHow)
HFD2N60_HFU2N60
July 2005
HFD2N60 / HFU2N60
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 1.8 A
FEATURES
Originative New Design .
HFD2N60S - 600V N-Channel MOSFET
(SemiHow)
HFD2N60S_HFU2N60S
March 2014
HFD2N60S / HFU2N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 1.9 A
FEATURES
Originative New Des.
HFD2N60U - N-Channel MOSFET
(SemiHow)
HFD2N60U_HFU2N60U
HFD2N60U / HFU2N60U
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Ox.
HFD2N65F - 600V N-Channel MOSFET
(SemiHow)
HFD2N65F_HFU2N65F
July 2015
HFD2N65F / HFU2N65F
600V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ ȍ ID = 2 A
FEATURES
Originative New Design .
HFD2N65S - N-Channel MOSFET
(SemiHow)
HFD2N65S_HFU2N65S
Mar 2010
HFD2N65S / HFU2N65S
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ = 5.0 ȍ ID = 1.6 A
FEATURES
Originative New Desig.
HFD2N65U - N-Channel MOSFET
(SemiHow)
HFD2N65U_HFU2N65U
HFD2N65U / HFU2N65U
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Ox.
HFD2N70S - N-Channel MOSFET
(SemiHow)
HFD2N70S_HFU2N70S
Dec 2009
HFD2N70S / HFU2N70S
700V N-Channel MOSFET
BVDSS = 700 V RDS(on) typ = 5.0 ȍ ID = 1.5 A
FEATURES
Originative New Desig.
HFD2 - SUBMINIATURE DIP RELAY
(ETC)
HFD2
SUBMINIATURE DIP RELAY
Features
•2
Form C contact,Polarized relay sensitivity 150mW
• High • Fits
standard 16 pin IC socket switching capacit.