HFG1N80 - N-Channel MOSFET

SemiHow

Datasheet Details

 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 7.5 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 13 Ω (Typ. ) @VGS=10V Preliminary Aug 2008 BVDSS = 800 V RDS(on) typ = 13 Ω ID = 1.0 A TO-92L 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv.

📁 HFG1N80 Similar Datasheet

Other Datasheets by SemiHow

Published: Jun 7, 2015 |