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HFI5N60S Datasheet - SemiHow

HFI5N60S N-Channel MOSFET

HFI5N60S Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 10.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V  100% Avalanche Tes

HFI5N60S Datasheet (819.00 KB)