HFN6N70U - N-Channel MOSFET
HFN6N70U Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.8 ȍ 7S #9GS=10V 100% Avalanche Test
