HFS5N60F - N-Channel MOSFET
HFS5N60F Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 12.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.8 ȍ 7S #9GS=10V 100% Avalanche Test
