HFS640A - N-Channel MOSFET

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Datasheet Details

Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Key Parameters Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 200 18 0.14 22 HFP640A TO-220 HFS640A TO-220F Symbol Unit V A ȍ nC S D G S D G Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter TO-220 TO-220F VDSS ID IDM VGS EAS IAR EAR PD Drain-Source Voltage Drain Current Drai.

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Published: Apr 14, 2017 |