Datasheet Specifications
- Part number
- HFS8N65S
- Manufacturer
- SemiHow
- File Size
- 251.84 KB
- Datasheet
- HFS8N65S-SemiHow.pdf
- Description
- N-Channel MOSFET
Description
HFS8N65S Sep 2009 HFS8N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 1.16 ȍ ID = 7.2 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 1.16 ȍ (Typ. ) @VGS=10V 100% Avalanche TestHFS8N65S Distributors
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