HFU5N60S - N-Channel MOSFET
HFU5N60S Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.0 ȍ (Typ.) @VGS=10V 100% Avalanche Tes
