HRS120N10K - N-Channel MOSFET

SemiHow

Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 65 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 10 Pȍ (Typ. ) @VGS=10V 100% Avalanche Tested July 2014 BVDSS = 100 V RDS(on) typ = 10 Pȍ ID = 73 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain.

📁 HRS120N10K Similar Datasheet

Other Datasheets by SemiHow

Published: Apr 13, 2017 |