HRS120N10K - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 65 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 10 Pȍ (Typ. ) @VGS=10V 100% Avalanche Tested July 2014 BVDSS = 100 V RDS(on) typ = 10 Pȍ ID = 73 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain.

HRS120N10K n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HRS120N10K
Manufacturer	SemiHow
File Size	193.64 KB
Description	N-Channel MOSFET
Datasheet	HRS120N10K Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
HRS1H	Relay	ETC
HRS1H	Relay	HKE
HRS1H-S-DC12V	Signal Relays	Multicomp
HRS1H-S-DC24V	Signal Relays	Multicomp
HRS1H-S-DC5V	Signal Relays	Multicomp

Other Datasheets by SemiHow

Part Number	Description
HRS105N15H	N-Channel Trench MOSFET
HRS130N06K	N-Channel MOSFET
HRS180N10K	100V N-Channel Trench MOSFET
HRS45N08K	N-Channel MOSFET
HRS50N06K	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

HRS120N10K HRS120N10K 100V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 65 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 10 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested July 2014 BVDSS = 100 V RDS(on) typ = 10 Pȍ ID = 73 A TO-220F 12 3 1.Gate 2. Drain 3.