SM65R380P - 650V N-Channel COOL MOSFET

Datasheet Details

Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 30nC (Typ. ).
BVDSS=650V,ID=11A.
RDS(on) : 0.3 8 Ω (Max) @VG=10V.
100% Avalanche Tested 1 3 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage ID Drain Current TC=25℃ TC=100℃ VGS(TH) Gate Threshold Voltage EAS Si.

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Published: Mar 30, 2025 |