SDB10S120 - Silicon Carbide Power Schottky Diode
SDB10S120 Features
* - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage Silicon Carbide SDB10S120 Product Summary VDC 1200 V IF 10 A Qc 40 nC K(3) Applicati
