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SDB10S120 Silicon Carbide Power Schottky Diode

SDB10S120 Description

Silicon Carbide Power Schottky Diode .

SDB10S120 Features

* - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage Silicon Carbide SDB10S120 Product Summary VDC 1200 V IF 10 A Qc 40 nC K(3) Applicati

SDB10S120 Applications

* - Solar Inverter - SMPS - Power Factor Correction - Induction Heating - UPS - Motor Drive MAXIMUM RATINGS Parameter Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Peak Repetitive Forward Current Symbol VRRM VDC IF IFRM Non-Repetitive Forward Surge Current IFSM P

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Datasheet Details

Part number
SDB10S120
Manufacturer
SemiSouth
File Size
318.92 KB
Datasheet
SDB10S120-SemiSouth.pdf
Description
Silicon Carbide Power Schottky Diode

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SemiSouth SDB10S120-like datasheet