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SDP30S120 Silicon Carbide Power Schottky Diode

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Description

Silicon Carbide Power Schottky Diode .

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Datasheet Specifications

Part number
SDP30S120
Manufacturer
SemiSouth
File Size
702.96 KB
Datasheet
SDP30S120-SemiSouth.pdf
Description
Silicon Carbide Power Schottky Diode

Features

* - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage Silicon Carbide SDP30S120 Product Summary VDC 1200 V IF 30 A Qc 130 nC K(3) Applicat

Applications

* - Solar Inverter - SMPS - Power Factor Correction - Induction Heating - UPS - Motor Drive 2 Lead TO-247 MAXIMUM RATINGS Parameter Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current (1) Symbol VRRM VDC IF Peak Repetitive Forward Current (1) IFRM Conditions Tj = 25 °C

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