Datasheet Specifications
- Part number
- SJDP120R085
- Manufacturer
- SemiSouth
- File Size
- 316.38 KB
- Datasheet
- SJDP120R085-SemiSouth.pdf
- Description
- Normally-On Trench Silicon Carbide Power JFET
Description
Silicon Carbide SJDP120R085 Normally-On Trench Silicon Carbide Power JFET .
Features
* - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C - RDS(on) typical of 0.075 Ω - Voltage Controlled - Low Gate Charge - Low Intrinsic Capacitance 4 Product Summary BVDS RDS(ON)max ETS,typ 1200 0.085 290 V Ω µJ D(2,4) GApplications
* - Solar Inverter - SMPS - Power Factor Correction - Induction Heating - UPS - Motor Drive TO-247 3 2 1 S(3) Internal Schematic MAXIMUM RATINGS Parameter Symbol Conditions Continuous Drain Current Pulsed Drain Current (1) Short Circuit Withstand Time Power Dissipation Gate-Source Voltage IDSJDP120R085 Distributors
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