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SJDP120R085

Normally-On Trench Silicon Carbide Power JFET

SJDP120R085 Features

* - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C - RDS(on) typical of 0.075 Ω - Voltage Controlled - Low Gate Charge - Low Intrinsic Capacitance 4 Product Summary BVDS RDS(ON)max ETS,typ 1200 0.085 290 V Ω µJ D(2,4) G

SJDP120R085 Datasheet (316.38 KB)

Preview of SJDP120R085 PDF

Datasheet Details

Part number:

SJDP120R085

Manufacturer:

SemiSouth

File Size:

316.38 KB

Description:

Normally-on trench silicon carbide power jfet.

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TAGS

SJDP120R085 Normally-On Trench Silicon Carbide Power JFET SemiSouth

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