SBP13007-H1 - High Voltage Fast-Switching NPN Power Transistor

SemiWell Semiconductor

SBP13007-H1 Datasheet Preview — Preview of SBP13007-H1 PDF

Datasheet Details

Part number	SBP13007-H1
Manufacturer	SemiWell Semiconductor
File Size	665.12 KB
Description	High Voltage Fast-Switching NPN Power Transistor
Datasheet	SBP13007-H1_SemiWellSemiconductor.pdf

SBP13007-H1 Product details

Description

TO-220 This device is designed for high voltage, high speed switching characteristic,especially suitable for ballast system.1 2 3 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ Parameter Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP ＜ 5 ms ) Base Current Base Peak Current ( tP ＜ 5 ms ) Total Dissipation at TC = 25 °C Storage Temperature Max.Operating Junction

Features

- Very High Switching Speed (Typical 60ns@5.0A) - Minimum Lot-to-Lot hFE Variation - Short storge time - Wide Reverse Bias S. O. A Symbol ○ 2.Collector 1.Base ○ c ○ 3.Emitter General.

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Published: Apr 14, 2011 |