SFP50N06 Datasheet - SemiWell Semiconductor

SFP50N06 N-Channel MOSFET

This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well sui.

SFP50N06 Features

* Low RDS(on) (0.023 Ω )@VGS=10V Low Gate Charge (Typical 39nC) Low Crss (Typical 110pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C) Symbol ◀ { { 2. Drain

* www.DataSheet4U.com

* 1. Gate ▲

* { 3.

SFP50N06_SemiWellSemiconductor.pdf