SFP50N06 Datasheet, mosfet equivalent, SemiWell Semiconductor

SFP50N06 Features

• Mosfet
• Low RDS(on) (0.023 Ω )@VGS=10V Low Gate Charge (Typical 39nC) Low Crss (Typical 110pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature

PDF File Details

Part number:

SFP50N06

Manufacturer:

SemiWell Semiconductor

File Size:

929.92kb

Download:

📄 Datasheet

Description:

N-channel mosfet. This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially de

TAGS

SFP50N06

SemiWell Semiconductor

📁 Related Datasheet

SFP50N06 - Silicon N-Channel MOSFET (Winsemi)
SFP50N06 Silicon N-Channel MOSFET Features ■ RDS(on)(Max 22mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 31nC) ■ Fast Switching Capability ■ 100%Avalan.

SFP-WDM-SM-0120A - 100/155Mbps SFP Transceiver (ZYTOM)
SFPBI LC Series 100/155M up to 20km transmission SFP-WDM-SM-01XX 100/155Mbps SFP Transceiver Features Operating data rate up to 155Mbps A type: 131.

SFP-WDM-SM-0120B - 100/155Mbps SFP Transceiver (ZYTOM)
SFPBI LC Series 100/155M up to 20km transmission SFP-WDM-SM-01XX 100/155Mbps SFP Transceiver Features Operating data rate up to 155Mbps A type: 131.

SFP100N150 - N-MOSFET (SCILICON)
Features  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS pliant Application Automot.

SFP120N100 - N-MOSFET (SCILICON)
SFPS(BFP)1(B2)01N2100N0100B SGT N-MOSFET100V, 120A, 4.0mΩ Features  Uses advanced SGT MOSFET technology  Extremely low on-resistance RDS(on)  High.

SFP120N120 - N-MOSFET (SCILICON)
Features  Adanced trench process technonlog  Extremely low on-resistance RDS(on)  High Ruggedness  100% Avalance Tested Application  Power Manage.

SFP120N80 - N-MOSFET (SCILICON)
Features Adanced trench process technology Extremely low on-resistance RDS(on) Excellent QgxRDS(on) product(FOM) Fast Switching High Ruggedness Applic.

SFP120N80B - N-MOSFET (SCILICON)
SFP(B)120N80B N-MOSFET 80V, 120A, 5.5mΩ Features Adanced trench process technology Fully characterized Avalance voltage and current Good stablity and.

SFP120N85 - N-MOSFET (SCILICON)
Features Adanced trench process technology Extremely low on-resistance RDS(on) Excellent QgxRDS(on) product(FOM) Fast Switching High Ruggedness Applic.

SFP130N100 - N-MOSFET (SCILICON)
Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=10V  100% Avalanche test  Pb-free lead platin.