SFP730 Datasheet - SemiWell Semiconductor

SFP730 N-Channel MOSFET

This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant to.

SFP730 Features

* SFP730 N-Channel MOSFET Symbol ◀ {

* manufactured RDS(on) (Max 1 Ω )@VGS=10V Gate Charge (Typical 32nC) Improved dv/dt Capability, High ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) { 2. Drain

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SFP730_SemiWellSemiconductor.pdf