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SEMIX452GB176HDS IGBT

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Description

SEMiX452GB176HDs SEMiX® 2s Trench IGBT Modules SEMiX452GB176HDs .

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Features

* Homogeneous Si
* Trench = Trenchgate technology
* VCE(sat) with positive temperature coefficient

Applications

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* AC inverter drives
* UPS
* Electronic welders Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 2xICnom VGES tpsc Tj VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V Tj = 125 °C Inverse diode IF T

SEMIX452GB176HDS Distributors

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